SILICON SURFACES - METALLIC CHARACTER, OXIDATION AND ADHESION

被引：37

作者：

CROS, A ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL DE PHYSIQUE | 1983年 / 44卷 / 06期

关键词：

D O I：

10.1051/jphys:01983004406070700

中图分类号：

学科分类号：

摘要：

引用

页码：707 / 711

页数：5

共 30 条

[1] INTERACTION OF OXYGEN WITH SILICON D-METAL INTERFACES - A PHOTOEMISSION INVESTIGATION [J].

ABBATI, I ;

ROSSI, G ;

CALLIARI, L ;

BRAICOVICH, L ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :409-412

[2] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].

ANDERSON, PW .

PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955

[3] EVIDENCE FOR A 2D-METALLIC STATE OF THE CLEAN 7 BY 7 SI(111)SURFACE [J].

BACKES, U ;

IBACH, H .

SOLID STATE COMMUNICATIONS, 1981, 40 (05) :575-577

[4]

BAGLIN J, UNPUB

[5] THE ADSORPTION OF MOLECULAR-OXYGEN SPECIES ON AG(110) [J].

BARTEAU, MA ;

MADIX, RJ .

SURFACE SCIENCE, 1980, 97 (01) :101-110

[6] STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON ROOM-TEMPERATURE FORMATION OF AN INTERFACE WITH AG [J].

BOLMONT, D ;

CHEN, P ;

SEBENNE, CA ;

PROIX, F .

PHYSICAL REVIEW B, 1981, 24 (08) :4552-4559

[7] OXYGEN INTERACTION WITH COSI(100) AND COSI2(100) SURFACES [J].

CASTRO, G ;

HULSE, JE ;

KUPPERS, J ;

GONZALEZELIPE, AR .

SURFACE SCIENCE, 1982, 117 (1-3) :621-628

[8]

COMMANDRE M, 1981, SPRINGER SERIES ELEC, V7, P68

[9]

CROS A, 1982, SURF SCI, V116, pL232, DOI 10.1016/0039-6028(82)90354-5

[10] CATALYTIC ACTION OF GOLD ATOMS ON THE OXIDATION OF SI(111) SURFACES [J].

CROS, A ;

DERRIEN, J ;

SALVAN, F .

SURFACE SCIENCE, 1981, 110 (02) :471-490

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