1/F NOISE IN SILICON-WAFERS

被引：28
作者：
BLACK, RD
WEISSMAN, MB
RESTLE, PJ
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 09期
关键词：
D O I：
10.1063/1.331547
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：6280 / 6289
页数：10
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