NONLINEAR HIGH-FREQUENCY RESPONSE OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：6
|
作者：
ABELES, JH [1 ]
TU, CW [1 ]
SCHWARZ, SA [1 ]
BRENNAN, TM [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 23期
关键词：
D O I：
10.1063/1.96836
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1620 / 1622
页数：3
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