AN EMPIRICAL-MODEL FOR THE THRESHOLD VOLTAGE OF ENHANCEMENT NMOSFETS

被引：1
作者：
PARK, HJ
KIM, CK
机构：
[1] KOREA ADV INST SCI & TECHNOL,DEPT ELECT ENGN,SEOUL 131,SOUTH KOREA
[2] KOREA INST ELECTR TECHNOL,KYUNGBUK,SOUTH KOREA
来源：
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1985年 / 4卷 / 04期
关键词：
D O I：
10.1109/TCAD.1985.1270163
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
收藏
页码：629 / 635
页数：7
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