SUBSTITUTIONAL DOPING OF PHOTOCHEMICALLY-DEPOSITED AMORPHOUS HYDROGENATED SILICON

被引：7

作者：

MISHIMA, Y ^{[1
]}

HIROSE, M ^{[1
]}

OSAKA, Y ^{[1
]}

ASHIDA, Y ^{[1
]}

机构：

[1] MITSUITOATSU CHEM, DEPT CORP DEV, TOKYO 100, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 10期

关键词：

D O I：

10.1063/1.333813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2803 / 2805

页数：3

共 13 条

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[3]

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[6] SILICON THIN-FILM FORMATION BY DIRECT PHOTOCHEMICAL DECOMPOSITION OF DISILANE [J].

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[7] PROPERTIES OF A-SI-H PREPARED BY THE PHOTOCHEMICAL DECOMPOSITION OF SI2H6 [J].

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[8]

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[9] THE 147-NM PHOTOLYSIS OF DISILANE [J].

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[10]

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