DEVICE ISOLATION BY OXYGEN IMPLANTATION IN N-TYPE INDIUM-PHOSPHIDE

被引：3

作者：

THOMPSON, PE

BINARI, SC

DIETRICH, HB

HENRY, RL

机构：

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 8-9期

关键词：

D O I：

10.1016/0038-1101(84)90031-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：817 / 818

页数：2

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