CHARGE-TRANSFER PROCESSES AT WSE2 ELECTRODES WITH PH-CONTROLLED STABILITY

被引:22
作者
SINN, C [1 ]
MEISSNER, D [1 ]
MEMMING, R [1 ]
机构
[1] INST SOLARENERGIEFORSCH,W-3000 HANOVER 1,GERMANY
关键词
D O I
10.1149/1.2086353
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
In aqueous solutions of low pH, the energy bands at the surface of n-WSe2 become unpinned upon illumination. The corresponding positive shift of bands is caused by accumulation of holes at the surface. This is understood as being due to a position of the corrosion potential positive of the valence band, which moves in a more negative direction with increasing pH. In acid solutions, the energy bands remain pinned under illumination in the presence of redox systems which have a standard potential located at or negative of the valence bandedge. Experiments with rotating ring disk electrodes have shown that in this case the electrode is completely stable. This is a very promising result with respect to regenerative solar cells, because for the first time a stabilization by a redox couple with a standard redox potential near the valence bandedge of a photocorroding n-type semiconductor was found. The charge transfer processes at n- and p-type electrodes are analyzed in detail in solutions of different pH. © 1990, The Electrochemical Society, Inc. All rights reserved.
引用
收藏
页码:168 / 172
页数:5
相关论文
共 32 条
[1]   PHOTOVOLTAGES EXCEEDING THE BAND-GAP OBSERVED WITH WSE2-I- SOLAR-CELLS [J].
ETMAN, M ;
TRIBUTSCH, H ;
BUCHER, E .
JOURNAL OF APPLIED ELECTROCHEMISTRY, 1981, 11 (05) :653-660
[2]   NATURE OF TOP OF VALENCE BAND IN LAYERED MO AND W DICHALCOGENIDES [J].
FONVILLE, RMM ;
GEERTSMA, W ;
HAAS, C .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 85 (02) :621-627
[3]   INVESTIGATION OF PHOTOELECTROCHEMICAL CORROSION OF SEMICONDUCTORS .1. [J].
FRESE, KW ;
MADOU, MJ ;
MORRISON, SR .
JOURNAL OF PHYSICAL CHEMISTRY, 1980, 84 (24) :3172-3178
[4]  
FRESE KW, 1981, J ELECTROCHEM SOC, V128, P1528
[5]   PHOTO-ELECTROCHEMICAL STUDIES OF MOS-2 ELECTRODE BY ROTATING-RING-DISK ELECTRODE TECHNIQUE [J].
FUJISHIMA, A ;
NOGUCHI, Y ;
HONDA, K ;
LOO, BH .
BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN, 1982, 55 (01) :17-22
[6]   COMPETITION BETWEEN PHOTOCORROSION AND PHOTO-OXIDATION OF REDOX SYSTEMS AT N-TYPE SEMICONDUCTOR ELECTRODES [J].
GERISCHER, H ;
LUBKE, M .
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1983, 87 (02) :123-128
[7]  
GOMES WP, 1983, J CHEM SOC F2, V79, P1391
[8]  
GOMES WP, 1981, ACS SERIES, V145, P120
[10]   THE ROLE OF CARRIER DIFFUSION AND INDIRECT OPTICAL-TRANSITIONS IN THE PHOTOELECTROCHEMICAL BEHAVIOR OF LAYER TYPE D-BAND SEMICONDUCTORS [J].
KAUTEK, W ;
GERISCHER, H ;
TRIBUTSCH, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) :2471-2478