ON THE ANALYSIS OF SPACE-CHARGE-LIMITED CURRENT VOLTAGE CHARACTERISTICS AND THE DENSITY OF STATES IN AMORPHOUS-SILICON

被引:8
作者
ORTON, JW
机构
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1984年 / 49卷 / 01期
关键词
D O I
10.1080/13642818408246492
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:L1 / L7
页数:7
相关论文
共 13 条
[1]   EVIDENCE OF SPACE-CHARGE-LIMITED CURRENT IN AMORPHOUS-SILICON SCHOTTKY DIODES [J].
ASHOK, S ;
LESTER, A ;
FONASH, SJ .
ELECTRON DEVICE LETTERS, 1980, 1 (10) :200-202
[2]  
BHATTACHARYA E, 1984, PHIL MAG B
[3]   DLTS STUDY OF THE GAP STATES OF AMORPHOUS SI1-XHX ALLOYS [J].
COHEN, JD ;
LANG, DV ;
BEAN, JC ;
HARBISON, JP .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :581-586
[4]   DIRECT MEASUREMENT OF THE BULK-DENSITY OF GAP STATES IN N-TYPE HYDROGENATED AMORPHOUS-SILICON [J].
COHEN, JD ;
LANG, DV ;
HARBISON, JP .
PHYSICAL REVIEW LETTERS, 1980, 45 (03) :197-200
[5]   DETERMINATION OF MIDGAP DENSITY OF STATES IN A-SI-H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS [J].
DENBOER, W .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :451-454
[6]   THRESHOLD SWITCHING IN HYDROGENATED AMORPHOUS-SILICON [J].
DENBOER, W .
APPLIED PHYSICS LETTERS, 1982, 40 (09) :812-813
[7]  
FURAKAWA S, 1982, SOLID ST COMMUN, V44, P927
[8]   DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].
HVAM, JM ;
BRODSKY, MH .
PHYSICAL REVIEW LETTERS, 1981, 46 (05) :371-374
[9]  
Lampert M.A., 1970, PHYS B, DOI DOI 10.1088/0031-9112/21/12/031/PDF
[10]   MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].
LANG, DV ;
COHEN, JD ;
HARBISON, JP .
PHYSICAL REVIEW B, 1982, 25 (08) :5285-5320