INVERSION-LAYERS AT PBTE INTERFACES

被引：11

作者：

CERRINA, F

DANIELS, RR

FANO, V

机构：

[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

[2] MASPEC,PARMA,ITALY

来源：

关键词：

D O I：

10.1063/1.94273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：182 / 184

页数：3

共 14 条

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[2] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

[3]

CERRINA F, UNPUB

[4]

DANIELS RR, 1982, PHYS REV LETT, V49, P845

[5]

EROFEEV RS, 1981, IZV AKAD NAUK SSSR N, V17, P416

[6]

FANO V, 1981, PROG CRYST GROWTH CH, V3, P287

[7]

HOLLOWAY H, 1980, PHYS THIN FILMS, V11, P105

[8]

MARGARITONDO G, UNPUB SOLID STATE EL

[9]

SPICER WE, 1965, PHYS REV A, V139, P565

[10]

WALPOLE JN, 1973, J APPL PHYS, V42, P5609