HOLE INJECTION INTO SILICON-NITRIDE - INTERFACE BARRIER ENERGIES BY INTERNAL PHOTOEMISSION

被引：66

作者：

DIMARIA, DJ ^{[1
]}

ARNETT, PC ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 12期

关键词：

D O I：

10.1063/1.88046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：711 / 713

页数：3

共 18 条

[1] OPTICAL PROPERTIES OF COPPER AND GOLD IN VACUUM ULTRA-VIOLET [J].

BEAGLEHO.D .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 85 (547P) :1007-&

[2]

Berning PH, 1963, PHYS THIN FILMS, V1, P69

[3] PHOTOEMISSIVE DETERMINATION OF BARRIER SHAPE IN TUNNEL JUNCTIONS [J].

BRAUNSTE.A ;

BRAUNSTE.M ;

PICUS, GS ;

MEAD, CA .

PHYSICAL REVIEW LETTERS, 1965, 14 (07) :219-&

[4]

CHU TL, 1967, J ELECTROCHEM SOC, V114, P171

[5] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[6] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J].

DEAL, BE ;

SNOW, EH ;

MEAD, CA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) :1873-&

[7] EFFECTS ON INTERFACE BARRIER ENERGIES OF METAL-ALUMINUM OXIDE-SEMICONDUCTOR (MAS) STRUCTURES AS A FUNCTION OF METAL ELECTRODE MATERIAL, CHARGE TRAPPING, AND ANNEALING [J].

DIMARIA, DJ .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) :5454-5456

[8] PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE [J].

DOO, VY ;

NICHOLS, DR ;

SILVEY, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) :1279-&

[9] The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J].

Fowler, RH .

PHYSICAL REVIEW, 1931, 38 (01) :45-56

[10] PHOTOEMISSION OF ELECTRONS AND HOLES INTO SILICON NITRIDE [J].

GOODMAN, AM .

APPLIED PHYSICS LETTERS, 1968, 13 (08) :275-&

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