ELECTRON-MOBILITY IN 2 COUPLED DELTA-LAYERS

被引：25
作者：
HAI, GQ [1 ]
STUDART, N [1 ]
PEETERS, FM [1 ]
机构：
[1] UNIV ANTWERP,DEPT PHYS,B-2610 ANTWERP,BELGIUM
来源：
PHYSICAL REVIEW B | 1995年 / 52卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.52.11273
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The low-temperature transport properties are studied for electrons confined in delta-doped semiconductor structures with two sheets in parallel. The subband quantum mobility and transport mobility are calculated numerically for the Si delta-doped GaAs systems. The effect of coupling of the two delta layers on the electron transport is investigated. Our calculations are in good agreement with experimental results.
引用
收藏
页码：11273 / 11276
页数：4
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