INFLUENCE OF ION-IMPLANTED TITANIUM ON THE PERFORMANCE OF EDGE-DEFINED, FILM-FED GROWN SILICON SOLAR-CELLS

被引：10

作者：

BORENSTEIN, JT ^{[1
]}

HANOKA, JI ^{[1
]}

BATHEY, BR ^{[1
]}

KALEJS, JP ^{[1
]}

MILSHTEIN, S ^{[1
]}

机构：

[1] UNIV MASSACHUSETTS,DEPT ELECTR ENGN,LOWELL,MA 01854

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 14期

关键词：

D O I：

10.1063/1.108603

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical properties of edge-defined, film-fed grown and Czochralski silicon solar cells ion implanted with titanium have been investigated using deep level transient spectroscopy. In both types of solar cell materials, the observed degradation in cell performance is associated with the Ti deep level reported in earlier studies. During the cell fabrication sequence, Ti in-diffuses into the bulk of the sample, creating a low-lifetime zone extending beneath the junction. Solar cell modeling, based on the extent of the titanium-diffused layer and the properties of the Ti center, is in excellent agreement with observed cell performance.

引用

页码：1615 / 1616

页数：2

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