BIPOLAR-TRANSISTOR CARRIER-INJECTED OPTICAL MODULATOR SWITCH - PROPOSAL AND ANALYSIS

被引：14

作者：

TADA, K

OKADA, Y

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 11期

关键词：

D O I：

10.1109/EDL.1986.26489

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：605 / 606

页数：2

共 13 条

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[2]

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[3] CARRIER DENSITY DEPENDENCE OF REFRACTIVE-INDEX IN ALGAAS SEMICONDUCTOR-LASERS [J].

ITO, M ;

KIMURA, T .

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[4] THE CARRIER-INDUCED INDEX CHANGE IN ALGAAS AND 1.3 MU-M INGAASP DIODE-LASERS [J].

MANNING, J ;

OLSHANSKY, R ;

SU, CB .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (10) :1525-1530

[5]

MIKAMI O, 1984, ELECTRON LETT, V20, P229

[6] LARGE-SIGNAL TRANSIENT RESPONSE OF JUNCTION TRANSISTORS [J].

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[7]

TADA K, 1962, J I ELEC ENG JAPAN, V82, P982

[8]

TADA K, 1967, IECE JAPAN, V20

[9]

TADA K, 1967, J I ELECTRON COMMUN, V50, P278

[10]

TSAI CS, 1978, IEEE J QUANTUM ELECT, V14, P513, DOI 10.1109/JQE.1978.1069829

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