EPR OF A [001] SI INTERSTITIAL COMPLEX IN IRRADIATED SILICON

被引：115

作者：

BROWER, KL ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

PHYSICAL REVIEW B | 1976年 / 14卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.14.872

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：872 / 883

页数：12

共 31 条

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[3] BONZON LL, SLA731017 SAND LAB R
[4] Brower K. L., 1971, Radiation Effects, V8, P213, DOI 10.1080/00337577108231031
[5] O-17 HYPERFINE-STRUCTURE OF NEUTRAL (S=1) VACANCY-OXYGEN CENTER IN ION-IMPLANTED SILICON
BROWER, KL
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[6] ELECTRON PARAMAGNETIC RESONANCE OF NEUTRAL (S=1) ONE-VACANCY-OXYGEN CENTER IN IRRADIATED SILICON
BROWER, KL
[J]. PHYSICAL REVIEW B, 1971, 4 (06): : 1968 - &
[7] BROWER KL, 1976, B AM PHYS SOC, V21, P364
[8] EPR OF A JAHN-TELLER DISTORTED (111) CARBON INTERSTITIALLY IN IRRADIATED SILICON
BROWER, KL
[J]. PHYSICAL REVIEW B, 1974, 9 (06): : 2607 - 2617
[9] CORBETT JW, 1966, RADIATION EFFECTS S7, P39
[10] NEW EPR SPECTRA IN IRRADIATED SILICON
DALY, DF
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 864 - &