LIQUID-PHASE EPITAXY OF GAP BY A TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE

被引：78

作者：

NISHIZAWA, JI

OKUNO, Y

机构：

[1] TOHOKU UNIV,RES INST ELECT COMMUN,SENDAI,JAPAN

[2] SEMICONDUCTOR RES FDN,SENDAI,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / 22卷 / 09期

关键词：

D O I：

10.1109/T-ED.1975.18209

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：716 / 721

页数：6

共 7 条

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SHINOZAK.S ;

ISHIDA, K .

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[2] HEAT-TREATMENT OF GALLIUM-PHOSPHIDE [J].

NISHIZAWA, J ;

OKUNO, Y ;

SUTO, K ;

SATO, T ;

YAMOKOSHI, S .

SOLID STATE COMMUNICATIONS, 1974, 14 (10) :889-892

[3]

NISHIZAWA J, 1972, OYO BUTSURI, V41, P912

[4]

NISHIZAWA J, 1974, SSD7425 IECE JAP TEC

[5]

NISHIZAWA J, 1974, EFM743 IECE JAP TEC

[6] NONSTOICHIOMETRY OF TE-DOPED GAAS [J].

NISHIZAWA, JI ;

OTSUKA, H ;

YAMAKOSHI, S ;

ISHIDA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (01) :46-56

[7] SURFACE MORPHOLOGY OF LIQUID-PHASE EPITAXIAL LAYERS [J].

SAUL, RH ;

ROCCASECCA, DD .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) :1983-1988

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