NUCLEATION AND GROWTH OF GAAS ON GE AND THE STRUCTURE OF ANTIPHASE BOUNDARIES

被引：84

作者：

PETROFF, PM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.583529

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：874 / 877

页数：4

共 8 条

[1] BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1986, 33 (10) :7346-7348

[2] ANTIPHASE BOUNDARIES IN GAAS [J].

CHO, NH ;

DECOOMAN, BC ;

CARTER, CB ;

FLETCHER, R ;

WAGNER, DK .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :879-881

[3] HETEROJUNCTION BAND DISCONTINUITY GROWTH SEQUENCE VARIATION AT COMPOUND SEMICONDUCTOR-GERMANIUM (110) INTERFACES - POSSIBLE ROLE OF ANTIPHASE DISORDER [J].

GRANT, RW ;

WALDROP, JR ;

KOWALCZYK, SP ;

KRAUT, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1295-1299

[4]

KRAUT EA, 1984, J VAC SCI TECHNOL B, V2, P411

[5] DARK-FIELD ELECTRON-MICROSCOPY OF DISSOCIATED DISLOCATIONS AND SURFACE STEPS IN SILICON USING FORBIDDEN REFLECTIONS [J].

OURMAZD, A ;

ANSTIS, GR ;

HIRSCH, PB .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1983, 48 (01) :139-153

[6] MICROSCOPY OF SURFACES AND APPLICATIONS TO MOLECULAR-BEAM EPITAXY [J].

PETROFF, PM ;

CHEN, CH ;

WERDER, DJ .

ULTRAMICROSCOPY, 1985, 17 (03) :185-191

[7] MOLECULAR-BEAM EPITAXY OF GE AND GA1-XALXAS ULTRA THIN-FILM SUPER-LATTICES [J].

PETROFF, PM ;

GOSSARD, AC ;

SAVAGE, A ;

WIEGMANN, W .

JOURNAL OF CRYSTAL GROWTH, 1979, 46 (02) :172-178

[8]

ZURCHER P, 1983, J VAC SCI TECHNOL, V1, P696

← 1 →