High-speed through-silicon via filling method using Cu-cored solder balls

被引:2
|
作者
He Ran [1 ]
Wang Huijuan [1 ]
Yu Daquan [1 ,2 ]
Zhou Jing [1 ]
Dai Fengwei [1 ]
Song Chongshen [1 ]
Sun Yu [1 ]
Wan Lixi [1 ]
机构
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Jiangsu R & D Ctr Internet Things, Wuxi 214315, Peoples R China
关键词
microsystem packaging; through-silicon vias; filling method; metallization; thermal-mechanical properties;
D O I
10.1088/1674-4926/33/8/086002
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A novel low-cost and high-speed via filling method using Cu-cored solder balls was investigated for through-silicon via manufacture. Cu-cored solder balls with a total diameter of 100 mu m were used to fill 150 mu m deep, 110 mu m wide vias in silicon. The wafer-level filling process can be completed in a few seconds, which is much faster than using the traditional electroplating process. Thermo-mechanical analysis of via filling using solder, Cu and Cu-cored solder was carried out to assess the thermo-mechanical properties of the different filling materials. It was found that the vias filled with Cu-cored solder exhibit less thermal-mechanical stresses than solder-filled vias, but more than Cu-filled vias.
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页数:4
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