A SHORT-CHANNEL GAAS-FET FABRICATED LIKE A MESFET, BUT OPERATING LIKE A JFET

被引：2

作者：

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 04期

关键词：

D O I：

10.1143/JJAP.21.L233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L233 / L234

页数：2

共 50 条

[31] A TWO-DIMENSIONAL COMPUTER-ANALYSIS OF TRIODE-LIKE CHARACTERISTICS OF SHORT-CHANNEL MOSFETS
DANG, LM
KONAKA, M
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1533 - 1539
[32] TRIODE-LIKE CHARACTERISTICS OF SHORT-CHANNEL MOSFETS IN PUNCH-THROUGH MODE-OPERATION
DANG, LM
KONAKA, M
NOZAWA, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2177 - 2177
[33] A TWO-DIMENSIONAL COMPUTER-ANALYSIS OF TRIODE-LIKE CHARACTERISTICS OF SHORT-CHANNEL MOSFETS
DANG, LM
KONAKA, M
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) : 598 - 604
[34] Id-Vd characteristics of optically biased short channel GaAs MESFET
Bose, S
Gupta, M
Gupta, RS
MICROELECTRONICS JOURNAL, 2001, 32 (03) : 241 - 247
[35] γ-irradiation hardness of short-channel nMOSFETs fabricated in a 0.5 μm SOI technology
Claeys, C
Simoen, E
Efremov, A
Litovchenko, VG
Evtukh, A
Kizjak, A
Rassamakin, J
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 186 : 429 - 434
[36] IMPROVED SHORT-CHANNEL GAAS-MESFETS BY USE OF HIGHER DOPING CONCENTRATION
DAEMBKES, H
BROCKERHOFF, W
HEIME, K
CAPPY, A
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1032 - 1037
[37] SHORT-CHANNEL EFFECTS IN SUB-100NM GAAS-MESFETS
NUMMILA, K
KETTERSON, AA
CARACCI, S
KOLODZEY, J
ADESIDA, I
ELECTRONICS LETTERS, 1991, 27 (17) : 1519 - 1521
[38] Bulk Fin-FET Strategy at Distinct Nanometer Regime for Measurement of Short-Channel Effects
S. M. Jagtap
Dr. V. J. Gond
Semiconductors, 2021, 55 : 504 - 510
[39] DEVICE CHARACTERIZATION OF P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FET'S.
Hirano, Makoto
Oe, Kunishige
Yanagawa, Fumihiko
Tsubaki, Kotaro
IEEE Transactions on Electron Devices, 1987, ED-34 (12)
[40] Bulk Fin-FET Strategy at Distinct Nanometer Regime for Measurement of Short-Channel Effects
Jagtap, S. M.
Gond, V. J.
SEMICONDUCTORS, 2021, 55 (05) : 504 - 510

← 1 2 3 4 5 →