A SHORT-CHANNEL GAAS-FET FABRICATED LIKE A MESFET, BUT OPERATING LIKE A JFET

被引：2

|

作者：

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 04期

关键词：

D O I：

10.1143/JJAP.21.L233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L233 / L234

页数：2

相关论文

共 50 条

[1] SHORT-CHANNEL GAAS-FET FABRICATED LIKE A MESFET BUT OPERATING LIKE A JFET
MORKOC, H
ELECTRONICS LETTERS, 1982, 18 (06) : 258 - 259
[2] SHORT-CHANNEL GAAS FET FABRICATED LIKE A MESFET, BUT OPERATING LIKE A JFET.
MORKOC, HADIS
1982, V 21 (N 3): : 233 - 234
[3] Model for optically biased short-channel GaAs MESFET
Bose, S
Adarsh
Gupta, R
Gupta, M
Gupta, RS
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2002, 32 (02) : 138 - 142
[4] Heavy doping for improved short-channel operation of GaAs MESFET
Mohammad, S., 1600, (25):
[5] DMOS SATISFIES JFET, CMOS, GAAS-FET PERFORMANCE NEEDS
OXNER, E
MICROWAVES & RF, 1987, 26 (08) : 133 - &
[6] MONTE-CARLO PARTICLE SIMULATION OF A GAAS SHORT-CHANNEL MESFET
AWANO, Y
TOMIZAWA, K
HASHIZUME, N
KAWASHIMA, M
ELECTRONICS LETTERS, 1983, 19 (01) : 20 - 21
[7] HEAVY DOPING FOR IMPROVED SHORT-CHANNEL OPERATION OF GAAS-MESFET
MOHAMMAD, S
PATIL, MB
MORKOC, H
ELECTRONICS LETTERS, 1989, 25 (05) : 331 - 332
[8] Performance Analysis of Short Channel GaAs MESFET Fabricated by SAINT Method
Rahman, Md. Mahmudur
Islam, Md. Toriqul
2012 15TH INTERNATIONAL CONFERENCE ON COMPUTER AND INFORMATION TECHNOLOGY (ICCIT), 2012, : 506 - 509
[9] PHYSICAL BASIS OF SHORT-CHANNEL MESFET OPERATION
WADA, T
FREY, J
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 476 - 490
[10] PHYSICAL BASIS OF SHORT-CHANNEL MESFET OPERATION
WADA, T
FREY, J
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 398 - 412

← 1 2 3 4 5 →