PHASE-TRANSITION IN A SYSTEM OF MAGNETIC-IMPURITIES

被引：1

作者：

OBUKHOV, SA

机构：

[1] A.F. Ioffe Institute Physics and Technology, 194021 St. Petersburg

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 88卷 / 03期

关键词：

Doping (additives) - Electric conductivity - Hall effect - Phase transitions - Semiconductor materials;

D O I：

10.1016/0038-1098(93)90753-A

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A new effect is described. Jumps of resistivity were observed with decrease of temperature in a system of magnetic impurities exemplified by Mn-doped InSb. Effect is caused by phase transition in a system.

引用

页码：255 / 256

页数：2

共 3 条

[1] EFFECT OF EXCHANGE INTERACTION ON METAL-DIELECTRIC TRANSITION IN P-INSB (MN) [J].

OBUKHOV, SA ;

PEPIC, NI .

SOLID STATE COMMUNICATIONS, 1989, 70 (01) :103-105

[2] LOW-TEMPERATURE RESISTANCE OF P-INSB(MN) [J].

OBUKHOV, SA ;

NEGANOV, BS ;

KISELEV, YF ;

CHERNIKOV, AN ;

VEKSHINA, VS ;

PEPIK, NI ;

POPKOV, AN .

CRYOGENICS, 1991, 31 (10) :874-877

[3] ANOMALOUS HALL-EFFECT IN A NONMAGNETIC SEMICONDUCTOR [J].

OBUKHOV, SA ;

VOLKOVA, IK .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1992, 173 (02) :681-689

← 1 →