SYNTHESIS AND CHARACTERIZATION OF INAS MULTIPLE QUANTUM-WELLS IN A (111)B GAAS MATRIX

We investigate the molecular beam epitaxy of InAs quantum wells in a [111]-oriented GaAs matrix. High-resolution x-ray diffraction measurements show the structural coherence of the samples to be maintained beyond the point where relaxation occurs in [100]-oriented structures. Low-temperature photoluminescence measurements reveal linewidths as narrow as 5 meV and show the formation of high-quality heterostructures along the [1111 direction with its well-known complications for molecular beam epitaxial growth. We observe blue shifts of the luminescence lines due to the internal, piezoelectric fields. The demonstration of room-temperature emission from our samples shows these structures to be promising candidates for optoelectronic applications.