MAGNETIC-FIELD-DEPENDENT EXCITONIC PHOTOLUMINESCENCE LINEWIDTH IN IN0.48GA0.52P SEMICONDUCTOR ALLOYS

被引：18

作者：

JONES, ED ^{[1
]}

SCHNEIDER, RP ^{[1
]}

LEE, SM ^{[1
]}

BAJAJ, KK ^{[1
]}

机构：

[1] EMORY UNIV,DEPT PHYS,ATLANTA,GA 30322

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.46.7225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the observation of a magnetic-field-dependent excitonic photoluminescence linewidth in In0.48Ga0.52P semiconductor alloys (lattice matched to GaAs). The measurements were made at 1.4 K and the magnetic field ranged between 0 and 13.6 T. The photoluminescence peak energies ranged between 1.976 and 1.995 eV while the full width half maximum linewidths varied from 4.3 to 6.0 meV. The linewidth variation is compared with several calculations which take into account the potential fluctuations caused by the disorder of the alloy components.

引用

页码：7225 / 7228

页数：4

共 11 条

[1] COMPOSITIONAL DISORDER-INDUCED BROADENING FOR FREE EXCITONS IN II-VI SEMICONDUCTING MIXED-CRYSTALS [J].