ELECTRON-MICROSCOPY OF TRANSFORMATION DISLOCATIONS AT INTERPHASE BOUNDARIES

被引：26

作者：

BONNET, R

LOUBRADOU, M

CATANA, A

STADELMANN, P

机构：

[1] INST NATL POLYTECH GRENOBLE,F-38402 ST MARTIN DHERES,FRANCE

[2] IBM CORP,ZURICH,SWITZERLAND

[3] ECOLE POLYTECH FED LAUSANNE,INST ELECTRON MICROSCOPY,CH-1007 LAUSANNE,SWITZERLAND

来源：

METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE | 1991年 / 22卷 / 06期

关键词：

D O I：

10.1007/BF02660646

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The concept of structural units (SU's) developed in order to describe the atomic structures of twin boundary facets is also used for interphase boundary (IB) facets quasi-parallel to small near-coincident planar cells of the two adjacent lattices. These facets, which have their own SU's, are separated by transformation dislocations (TD's), the cores of which are often related to ledges having heights equal to several interplanar spacings. It is shown that the Somigliana dislocation (SD) concept is a good tool for the computation of elastic displacement fields of these TD's in anisotropic elasticity. Applications are presented concerning the following IB's observed in high-resolution transmission electron microscopy (HRTEM): Si/TiSi2, Si/CoSi2, and Ni3Al/Ni3Nb. The identification of the atomic rows around some TD's at Si/CoSi2 and Ni3Al/Ni3Nb has been obtained by careful comparisons of experimental and calculated images.

引用

页码：1145 / 1158

页数：14

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