VACANCY TYPE MICRODEFECTS IN DISLOCATION-FREE SILICON SINGLE-CRYSTALS

被引：11

作者：

SITNIKOVA, AA ^{[1
]}

SOROKIN, LM ^{[1
]}

TALANIN, IE ^{[1
]}

FALKEVICH, ES ^{[1
]}

SHEIKHET, EG ^{[1
]}

机构：

[1] ZAPOROZHE IND INST,ZAPOROZHE,UKRAINE,USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 90卷 / 01期

关键词：

D O I：

10.1002/pssa.2210900151

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K31 / &

共 10 条

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[7] MICRODEFECTS IN A NON-STRIATED DISTRIBUTION IN FLOATING-ZONE SILICON-CRYSTALS [J].

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[8] ELECTRON-MICROSCOPIC STUDY OF MICRODEFECTS IN SILICON SINGLE-CRYSTALS GROWN AT HIGH-SPEED [J].

SITNIKOVA, AA ;

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[9] FORMATION OF SELF-DISORDER AGGLOMERATES IN DISLOCATION-FREE SILICON DURING CRYSTAL-GROWTH [J].

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[10]

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