LPCVD SILICON-CARBIDE AND SILICON CARBONITRIDE FILMS USING LIQUID SINGLE PRECURSORS

被引：0

作者：

KLEPS, I

CACCAVALE, F

BRUSATIN, G

ANGELESCU, A

ARMELAO, L

机构：

[1] INST MICROTECHNOL,R-72225 BUCHAREST,ROMANIA

[2] UNIV PADUA,DEPT PHYS,PADUA,ITALY

[3] UNIV PADUA,DEPT ENGN MECH,DIV MAT,PADUA,ITALY

[4] UNIV PADUA,DEPT INORGAN MET ORGAN & ANALYT CHEM,PADUA,ITALY

来源：

VACUUM | 1995年 / 46卷 / 8-10期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon carbide (Si1-xCx) and silicon carbonitride (SICxNy) films were obtained by the low pressure chemical vapour deposition (LPCVD) method at moderate (750-900 degrees C) and high (T > 900 degrees C) temperatures using liquid single organosilicon precursors such as hexamethyldisilane (hmds) and hexamethyldisilazane (HMDS). Structural and compositional investigations of these films have been effected using various analytical techniques: Rutheford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR), etc.

引用

页码：979 / 981

页数：3

共 5 条

[1] A NEW SECONDARY ION MASS-SPECTROMETRY TECHNIQUE FOR III-V SEMICONDUCTOR COMPOUNDS USING THE MOLECULAR-IONS CSM [J].