PSEUDOMORPHIC GAINAS/GAAS SINGLE QUANTUM WELL HIGH ELECTRON-MOBILITY TRANSISTOR

被引：1
作者：
ROSENBERG, JJ
BENLAMRI, M
KIRCHNER, PD
WOODALL, JM
PETTIT, GD
机构：
[1] BROWN UNIV,DEPT ENGN,PROVIDENCE,RI 02912
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 11期
关键词：
D O I：
10.1109/T-ED.1985.22357
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2546 / 2546
页数：1
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