PSEUDOMORPHIC GAINAS/GAAS SINGLE QUANTUM WELL HIGH ELECTRON-MOBILITY TRANSISTOR

被引：1
|
作者：
ROSENBERG, JJ
BENLAMRI, M
KIRCHNER, PD
WOODALL, JM
PETTIT, GD
机构：
[1] BROWN UNIV,DEPT ENGN,PROVIDENCE,RI 02912
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 11期
关键词：
D O I：
10.1109/T-ED.1985.22357
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2546 / 2546
页数：1
相关论文
共 50 条
  • [21] MICROWAVE PERFORMANCE OF AN OPTICALLY CONTROLLED ALGAAS/GAAS HIGH ELECTRON-MOBILITY TRANSISTOR AND GAAS-MESFET
    SIMONS, RN
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1987, 35 (12) : 1444 - 1455
  • [22] NOVEL PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES WITH GAAS-IN0.3 GA0.7 AS THIN STRAINED SUPERLATTICE ACTIVE LAYERS
    BALLINGALL, JM
    HO, P
    TESSMER, GJ
    MARTIN, PA
    LEWIS, N
    HALL, EL
    APPLIED PHYSICS LETTERS, 1989, 54 (21) : 2121 - 2123
  • [23] EFFICIENT CHARGE CONTROL MODEL FOR PSEUDOMORPHIC AND STRAINED HIGH ELECTRON-MOBILITY TRANSISTORS ON GAAS AND INP SUBSTRATES
    HALKIAS, G
    VEGIRI, A
    PANANAKAKIS, G
    CHRISTOU, A
    SOLID-STATE ELECTRONICS, 1992, 35 (04) : 459 - 465
  • [24] EFFECT OF RAPID THERMAL ANNEALING ON PLANAR-DOPED PSEUDOMORPHIC INGAAS HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES
    STREIT, DC
    JONES, WL
    SADWICK, LP
    KIM, CW
    HWU, RJ
    APPLIED PHYSICS LETTERS, 1991, 58 (20) : 2273 - 2275
  • [25] FABRICATION OF ELECTROPLATED T GATES WITH 60 NM GATE LENGTH FOR PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTOR DEVICES
    MARTEN, A
    SCHNEIDER, H
    SCHWEIZER, H
    NICKEL, H
    SCHLAPP, W
    LOSCH, R
    DAMBKES, H
    MARSCHALL, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06): : 2861 - 2865
  • [26] Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse
    席晓文
    柴常春
    刘阳
    杨银堂
    樊庆扬
    史春蕾
    Chinese Physics B, 2016, 25 (08) : 462 - 466
  • [27] Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse
    席晓文
    柴常春
    赵刚
    杨银堂
    于新海
    刘阳
    Chinese Physics B, 2016, 25 (04) : 460 - 464
  • [28] Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse
    Xi, Xiao-Wen
    Chai, Chang-Chun
    Liu, Yang
    Yang, Yin-Tang
    Fan, Qing-Yang
    Shi, Chun-Lei
    CHINESE PHYSICS B, 2016, 25 (08)
  • [29] Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles
    Lin, DY
    Huang, YS
    Tiong, KK
    Pollak, FH
    Evans, KR
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (01) : 103 - 109
  • [30] Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse
    Xi, Xiao-Wen
    Chai, Chang-Chun
    Zhao, Gang
    Yang, Yin-Tang
    Yu, Xin-Hai
    Liu, Yang
    CHINESE PHYSICS B, 2016, 25 (04)
12345