LOW-TEMPERATURE EPITAXIAL-GROWTH OF GAAS ON (100) SILICON SUBSTRATES

被引：7
作者：
CHRISTOU, A
WILKINS, BR
TSENG, WF
机构：
[1] US Naval Research Lab, Washington,, DC, USA, US Naval Research Lab, Washington, DC, USA
来源：
ELECTRONICS LETTERS | 1985年 / 21卷 / 09期
关键词：
D O I：
10.1049/el:19850289
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SEMICONDUCTING GALLIUM ARSENIDE
引用
收藏
页码：406 / 408
页数：3
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