ANALYTIC SOLUTIONS FOR OPTIMIZED ELLIPSOMETRIC MEASUREMENTS OF INTERFACES AND SURFACE-LAYERS IN THIN-FILM STRUCTURES

被引：7

作者：

ALTEROVITZ, SA ^{[1
]}

BUABBUD, GH ^{[1
]}

WOOLLAM, JA ^{[1
]}

机构：

[1] UNIV NEBRASKA,DEPT ELECT ENGN,LINCOLN,NE 68588

来源：

THIN SOLID FILMS | 1985年 / 123卷 / 03期

关键词：

This research was supported by Grant 3-154 from the National Aeronautics and Space Administration Lewis Research Center and Air Force Contract F33601-81-MJ869;

D O I：

10.1016/0040-6090(85)90159-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：183 / 195

页数：13

共 13 条

[1] AN ENHANCED SENSITIVITY NULL ELLIPSOMETRY TECHNIQUE FOR STUDYING FILMS ON SUBSTRATES - APPLICATION TO SILICON-NITRIDE ON GALLIUM-ARSENIDE
ALTEROVITZ, SA
BUABBUD, GH
WOOLLAM, JA
LIU, DC
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1559 - 1569
[2] SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE
ASPNES, DE
THEETEN, JB
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) : 1359 - 1365
[3] OPTICAL-PROPERTIES OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE
ASPNES, DE
THEETEN, JB
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (14) : 1046 - 1050
[4] ASPNES DE, 1981, SPIE P, V276, P227
[5] COMBINED REFLECTION AND TRANSMISSION THIN-FILM ELLIPSOMETRY - UNIFIED LINEAR ANALYSIS
AZZAM, RMA
ELSHAZLYZAGHLOUL, M
BASHARA, NM
[J]. APPLIED OPTICS, 1975, 14 (07): : 1652 - 1663
[6] ELLIPSOMETRIC FUNCTION OF A FILM-SUBSTRATE SYSTEM - APPLICATIONS TO DESIGN OF REFLECTION-TYPE OPTICAL DEVICES AND TO ELLIPSOMETRY
AZZAM, RMA
ZAGHLOUL, ARM
BASHARA, NM
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1975, 65 (03) : 252 - 260
[7] Azzam RMA, 1977, ELLIPSOMETRY POLARIZ
[8] PARAMETER CORRELATION AND PRECISION IN MULTIPLE-ANGLE ELLIPSOMETRY
BUABBUD, GH
BASHARA, NM
[J]. APPLIED OPTICS, 1981, 20 (17): : 3020 - 3026
[9] BUABBUD GH, UNPUB THIN SOLID FIL
[10] CHARACTERIZATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AND THERMALLY GROWN SILICON-NITRIDE FILMS
HABRAKEN, FHPM
KUIPER, AET
VANOOSTROM, A
TAMMINGA, Y
THEETEN, JB
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 404 - 415

← 1 2 →