LOW-TEMPERATURE INTERDIFFUSION BETWEEN ALUMINUM THIN-FILMS AND GAAS

被引:23
作者
CHRISTOU, A [1 ]
DAY, HM [1 ]
机构
[1] USN,RES LAB,WASHINGTON,DC 20375
关键词
D O I
10.1063/1.323294
中图分类号
O59 [应用物理学];
学科分类号
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页码:4217 / 4219
页数:3
相关论文
共 11 条
[1]   GENERAL FORMALISM FOR QUANTITATIVE AUGER ANALYSIS [J].
CHANG, CC .
SURFACE SCIENCE, 1975, 48 (01) :9-21
[2]  
CHANG CC, 1974, CHARACTERIZATION SOL, pCH20
[3]   SILICIDE FORMATION AND INTERDIFFUSION EFFECTS IN SI-TA, SIO2-TA AND SI-PTSI-TA THIN-FILM STRUCTURES [J].
CHRISTOU, A ;
DAY, HM .
JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (01) :1-12
[4]   MECHANISM OF RF SPIKE BURN-OUT IN SCHOTTKY-BARRIER MICROWAVE MIXERS [J].
GERZON, PH ;
BARNES, JW ;
WAITE, DW ;
NORTHROP, DC .
SOLID-STATE ELECTRONICS, 1975, 18 (04) :343-&
[5]  
HAYTHORNTHWAITE R, 1975, P ANN REL PHYS C LAS
[6]  
KIM HB, 1974, 741F6MPATTP1 WEST RE
[7]  
MORRIS G, 1974, IEEE T MICROWAVE THE, V22, P245
[8]   EFFECT OF SURFACE PROPERTIES ON N-TYPE GAAS-NI AND GAAS-AL SCHOTTKY DIODES [J].
PATWARI, AM ;
HARTNAGEL, HL .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02) :469-475
[9]   EFFECT OF SURFACE TREATMENT ON GALLIUM ARSENIDE SCHOTTKY BARRIER DIODES [J].
SMITH, BL .
SOLID-STATE ELECTRONICS, 1968, 11 (04) :502-&
[10]   NEAR IDEAL AU-GAP SCHOTTKY DIODES [J].
SMITH, BL .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4675-&