TEMPERATURE-DEPENDENCE OF ELECTRON TRAPPING IN METAL-OXIDE-SEMICONDUCTOR DEVICES AS A FUNCTION OF THE INJECTION MODE

被引：10
|
作者：
GILDENBLAT, GS [1 ]
HUANG, CL [1 ]
GROT, SA [1 ]
机构：
[1] PENN STATE UNIV,DEPT ELECT ENGN,UNIVERSITY PK,PA 16802
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 04期
关键词：
D O I：
10.1063/1.341727
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2150 / 2152
页数：3
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