TEMPERATURE-DEPENDENCE OF ELECTRON TRAPPING IN METAL-OXIDE-SEMICONDUCTOR DEVICES AS A FUNCTION OF THE INJECTION MODE

被引：10

作者：

GILDENBLAT, GS ^{[1
]}

HUANG, CL ^{[1
]}

GROT, SA ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT ELECT ENGN,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.341727

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2150 / 2152

页数：3

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