INFLUENCE OF VAPOR COMPOSITION ON THE GROWTH RATE AND MORPHOLOGY OF GALLIUM ARSENIDE EPITAXIAL FILMS

被引：29

作者：

EWING, RE

GREENE, PE

机构：

来源：

关键词：

D O I：

10.1149/1.2425975

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1266 / 1269

页数：4

共 7 条

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[2] THE EPITAXIAL GROWTH OF GAP BY A GA2O VAPOR TRANSPORT MECHANISM [J].

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[3]

FURMAN NH, 1962, STANDARD METHODS CHE, P41

[4]

KOLTHOFF IM, 1940, IND ENG CHEM ANAL ED, V12, P177

[5] VAPOR GROWTH OF GALLIUM ARSENIDE [J].

NEWMAN, RL ;

GOLDSMITH, N .

[6]

SANGSTER RC, 1962, COMPOUND SEMICONDUCT, V1, P241

[7]

WILLIAMS FV, 1961, J ELECTROCHEM SOC, V108, pC177