DETERMINATION OF MIDGAP DENSITY OF STATES IN A-SI-H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS

被引：181
作者：
DENBOER, W
机构：
来源：
JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期
关键词：
D O I：
10.1051/jphyscol:1981494
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：451 / 454
页数：4
相关论文
共 8 条
[1]   EVIDENCE OF SPACE-CHARGE-LIMITED CURRENT IN AMORPHOUS-SILICON SCHOTTKY DIODES [J].
ASHOK, S ;
LESTER, A ;
FONASH, SJ .
ELECTRON DEVICE LETTERS, 1980, 1 (10) :200-202
[2]  
Carlson D. E., 1979, Amorphous semiconductors, P287
[3]   OBSERVATION OF ELECTRON AND HOLE TRAPS IN HYDROGENATED AMORPHOUS-SILICON BY VOLTAGE-EXCITED AND LASER-EXCITED DEEP LEVEL TRANSIENT SPECTROSCOPY [J].
COHEN, JD ;
LANG, DV ;
HARBISON, JP ;
BEAN, JC .
SOLAR CELLS, 1980, 2 (03) :331-347
[4]  
Lampert M.A., 1970, PHYS B, DOI DOI 10.1088/0031-9112/21/12/031/PDF
[5]   INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J].
MADAN, A ;
LECOMBER, PG ;
SPEAR, WE .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) :239-257
[6]   LOCALIZED STATE DISTRIBUTION IN AMORPHOUS-SILICON-BASED ALLOYS USING THE FIELD-EFFECT TECHNIQUE [J].
MADAN, A .
SOLAR CELLS, 1980, 2 (03) :277-288
[7]  
ONDRIS M, 1980, 3RD P EC PHOT SOL EN, P809
[8]   SCHOTTKY-BARRIER CHARACTERISTICS OF METAL-AMORPHOUS-SILICON DIODES [J].
WRONSKI, CR ;
CARLSON, DE ;
DANIEL, RE .
APPLIED PHYSICS LETTERS, 1976, 29 (09) :602-605
1