EFFECTS OF DOPING ON CONDENSED ELECTRON-HOLE STATE IN GERMANIUM AND SILICON

被引：33

作者：

MARTIN, RW ^{[1
]}

SAUER, R ^{[1
]}

机构：

[1] UNIV STUTTGART, PHYS INST, STUTTGART, WEST GERMANY

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1974年 / 62卷 / 02期

关键词：

D O I：

10.1002/pssb.2220620213

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：443 / 452

页数：10

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