HIGH-TEMPERATURE 6H-SIC DINISTOR

被引：0
|
作者：
ANDREEV, AN
STRELCHUK, AM
SAVKINA, NS
SNEGOV, FM
CHELNOKOV, VE
机构：
[1] A.F. Ioffe Physical-Technical Institute, St. Petersburg
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 29卷 / 1-3期
关键词：
SILICON CARBIDE; SEMICONDUCTOR DEVICES;
D O I：
10.1016/0921-5107(94)04051-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
6H-SiC dinistors based on epitaxial layers grown by sublimation epitaxy were fabricated. Parameters of these devices were studied at the temperatures 500-800 K.
引用
收藏
页码：194 / 197
页数：4
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