THERMAL-OXIDATION OF UNDOPED LPCVD POLYCRYSTALLINE-SILICON FILMS

被引：8

作者：

LU, CY

TSAI, NS

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 02期

关键词：

D O I：

10.1149/1.2108596

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：446 / 447

页数：2

共 9 条

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[8] THERMAL-OXIDATION OF HEAVILY PHOSPHORUS-DOPED THIN-FILMS OF POLYCRYSTALLINE SILICON [J].

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[9] THERMAL-OXIDATION OF PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON IN WET OXYGEN [J].

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