NEW DEVELOPMENTS IN DOUBLE SIDED SILICON STRIP DETECTORS

被引:10
|
作者
BECKER, H
BOULOS, T
CATTANEO, P
DIETL, H
HAUFF, D
HOLL, P
LANGE, E
LUITZ, G
MOSER, HG
SCHWARZ, AS
SETTLES, R
STRUDER, L
KEMMER, J
PRECHTEL, U
ZIEMANN, T
BUTTLER, W
机构
[1] TECH UNIV MUNICH,FAK PHYS,W-8046 GARCHING,GERMANY
[2] MESSERSCHMITT BOLKOW BLOHM GMBH,W-8000 MUNICH 80,GERMANY
[3] FRAUENHOFER INST MIKROELEKTR SYST,W-4100 DUISBURG,GERMANY
关键词
D O I
10.1109/23.106599
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new type of double sided silicon strip detector has been built and tested using high density VLSI readout electronics connected to both sides. Capacitive coupling of the strips to the readout electronics has been achieved by integrating the capacitors into the detector design, which was made possible by introducing a new detector biasing concept. Schemes to simplify the technology of the fabrication of the detectors will be discussed. The static performance properties of the devices as well as implications of the use of VLSI electronics in their readout will be described. Prototype detectors of the described design equipped with high density readout electronics have been installed in the ALEPH detector at LEP. Test results on the performance will be given. Copyright © 1990 by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码:101 / 106
页数:6
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