CHARACTERIZATION OF REACTIVE ION ETCHING OF GLASS AND ITS APPLICATIONS IN INTEGRATED-OPTICS

被引：39

作者：

RONGGUI, S ^{[1
]}

RIGHINI, GC ^{[1
]}

机构：

[1] CNR,IST RIC ONDE ELETTEOMAGNET,I-50127 FLORENCE,ITALY

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1991年 / 9卷 / 05期

关键词：

D O I：

10.1116/1.577229

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report characterization of reactive ion etching (RIE) of soda-lime glass under various conditions. Etching rates of glass and photoresist have been measured while using three different reactive gas mixtures, i.e., CHF3/Ar, CF4/O2, and CF4/Ar. Experimental results are presented referring to the RIE fabrication of periodic structures in soda-lime glass ion-exchanged waveguide, starting from gratings which had been recorded in photoresist by holographic techniques.

引用

页码：2709 / 2712

页数：4

共 7 条

[1] TRUE SURFACE-TEMPERATURE OF A SILICON WAFER AND THE RELATED ETCH RATE IN A CF4 PLASMA [J].