THE SENSITIVITY OF PHOTOCONDUCTOR RECEIVERS FOR LONG-WAVELENGTH OPTICAL COMMUNICATIONS

被引:29
作者
FORREST, SR
机构
关键词
D O I
10.1109/JLT.1985.1074187
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:347 / 360
页数:14
相关论文
共 29 条
[3]  
BRECKENRIDGE RG, 1956, 1954 P PHOT C ATL CI
[4]  
Campbell J. C., 1983, International Electron Devices Meeting 1983. Technical Digest, P464
[5]   INTERDIGITATED AL0.48IN0.52AS/GA0.47IN0.53AS PHOTOCONDUCTIVE DETECTORS [J].
CHEN, CY ;
PANG, YM ;
ALAVI, K ;
CHO, AY ;
GARBINSKI, PA .
APPLIED PHYSICS LETTERS, 1984, 44 (01) :99-101
[6]  
CHEN CY, 1984, APR TOP M INT GUID W
[7]  
CHEN CY, 1984, 7TH TOP M INT GUID W
[8]   HIGH-PURITY INP AND INGAASP GROWN BY LIQUID-PHASE EPITAXY [J].
COOK, LW ;
TASHIMA, MM ;
TABATABAIE, N ;
LOW, TS ;
STILLMAN, GE .
JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) :475-484
[9]   SOLID-STATE PHOTODETECTION - COMPARISON BETWEEN PHOTODIODES + PHOTOCONDUCTORS [J].
DIDOMENICO, M ;
SVELTO, O .
PROCEEDINGS OF THE IEEE, 1964, 52 (02) :136-&
[10]   EXCESS-NOISE AND RECEIVER SENSITIVITY MEASUREMENTS OF IN0.53GA0.47AS-INP AVALANCHE PHOTO-DIODES [J].
FORREST, SR ;
WILLIAMS, GF ;
KIM, OK ;
SMITH, RG .
ELECTRONICS LETTERS, 1981, 17 (24) :917-919