SIGN OF HALL-EFFECT IN HOPPING CONDUCTION

被引:121
作者
EMIN, D [1 ]
机构
[1] SANDIA LAB,ALBUQUERQUE,NM 87115
来源
PHILOSOPHICAL MAGAZINE | 1977年 / 35卷 / 05期
关键词
D O I
10.1080/14786437708232944
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1189 / 1198
页数:10
相关论文
共 24 条
[1]   ELECTRICAL AND OPTICAL PROPERTIES OF AMORPHOUS GERMANIUM [J].
CLARK, AH .
PHYSICAL REVIEW, 1967, 154 (03) :750-&
[2]  
COHEN MH, 1970, AMORPHOUS LIQUID SEM, P391
[3]  
DAVIS EA, 1976, ELECTRONIC PHENOMENA, P212
[4]   STUDIES OF SMALL-POLARON MOTION .4. ADIABATIC THEORY OF HALL EFFECT [J].
EMIN, D ;
HOLSTEIN, T .
ANNALS OF PHYSICS, 1969, 53 (03) :439-&
[5]   HALL MOBILITY OF A SMALL POLARON IN A SQUARE LATTICE [J].
EMIN, D .
ANNALS OF PHYSICS, 1971, 64 (02) :336-&
[6]   STUDIES OF POLARON MOTION .3. THE HALL MOBILITY OF THE SMALL POLARON [J].
FRIEDMAN, L ;
HOLSTEIN, T .
ANNALS OF PHYSICS, 1963, 21 (03) :494-549
[7]   TRANSPORT PROPERTIES OF ORGANIC SEMICONDUCTORS [J].
FRIEDMAN, L .
PHYSICAL REVIEW, 1964, 133 (6A) :1668-+
[8]   HALL EFFECT IN POLARON-BAND REGIME [J].
FRIEDMAN, L .
PHYSICAL REVIEW, 1963, 131 (06) :2445-&
[9]  
Friedman L., 1971, J NONCRYST SOLIDS, V6, P329
[10]  
GEBALLE TH, 1959, SEMICONDUCTORS, P313