DOPING EFFECTS IN A-SI-H

被引：0
|
作者：
BEYER, W [1 ]
OVERHOF, H [1 ]
机构：
[1] UNIV PADERBORN, FACHBEREICH PHYS, D-4790 PADERBORN, FED REP GER
来源：
SEMICONDUCTORS AND SEMIMETALS | 1984年 / 21卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：257 / 307
页数：51
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