BARRIER COMPOSITION AND ELECTRICAL-PROPERTIES OF HIGH-QUALITY ALL-NIOBIUM JOSEPHSON TUNNEL-JUNCTIONS

被引：22
作者：
LATTA, EE
GASSER, M
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 02期
关键词：
D O I：
10.1063/1.332128
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1115 / 1119
页数：5
相关论文
共 19 条
  • [1] CAPACITANCE AND ELLIPSOMETRICALLY DETERMINED OXIDE THICKNESS OF NB-OXIDE-PB JOSEPHSON TUNNEL-JUNCTIONS
    BASAVAIAH, S
    GREINER, JH
    [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4201 - 4202
  • [2] BERTHEL KH, 1981, SOV J LOW TEMP PHYS, V7, P75
  • [3] FABRICATION AND PROPERTIES OF NIOBIUM JOSEPHSON TUNNEL-JUNCTIONS
    BROOM, RF
    LAIBOWITZ, RB
    MOHR, TO
    WALTER, W
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (02) : 212 - 222
  • [4] JOSEPHSON-JUNCTIONS OF SMALL AREA FORMED ON THE EDGES OF NIOBIUM FILMS
    BROOM, RF
    OOSENBRUG, A
    WALTER, W
    [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 237 - 239
  • [5] BROOM RF, 1980, IEEE T ELECTRON DEV, V27, P1988
  • [6] ERTL G, 1974, LOW ENERGY ELECTRONS
  • [7] NB-NB THIN-FILM JOSEPHSON JUNCTIONS
    HAWKINS, G
    CLARKE, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1616 - 1619
  • [8] KARULKAR PC, 1981, J VAC SCI TECHNOL, V18, P169, DOI 10.1116/1.570717
  • [9] NEW TECHNIQUE FOR ELECTRON-TUNNELING JUNCTION FABRICATION AND ITS APPLICATION TO TANTALUM AND NIOBIUM
    KEITH, V
    LESLIE, JD
    [J]. PHYSICAL REVIEW B, 1978, 18 (09): : 4739 - 4761
  • [10] KOHLER HJ, 1981, PHYS STATUS SOLIDI A, V67, P479
12