GROWTH OF DEVICE QUALITY GAAS BY CHEMICAL BEAM EPITAXY

被引：13
作者：
CHIU, TH
TSANG, WT
DITZENBERGER, JA
TU, CW
REN, F
WU, CS
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
[2] AT&T BELL LABS,READING,PA 19604
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 03期
关键词：
D O I：
10.1007/BF02652181
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：217 / 221
页数：5
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