Zn(O, S) layers for chalcoyprite solar cells sputtered from a single target

被引：22

作者：

Grimm, A. ^{[1
]}

Kieven, D. ^{[1
]}

Lauermann, I. ^{[1
]}

Lux-Steiner, M. Ch. ^{[1
]}

Hergert, F. ^{[2
]}

Schwieger, R. ^{[2
]}

Klenk, R. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, Hahn Meitner Pl 1, D-14109 Berlin, Germany

[2] Bosch Solar CISTech, D-14772 Brandenburg, Germany

来源：

EPJ PHOTOVOLTAICS | 2012年 / 3卷

关键词：

Copper compounds - Cadmium sulfide - Buffer layers - Zinc oxide - II-VI semiconductors;

D O I：

10.1051/epjpv/2012011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simplified Cu (In, Ga) (S, Se) 2/Zn (O, S)/ZnO: Al stack for chalcopyrite thin-film solar cells is proposed. In this stack the Zn (O, S) layer combines the roles of the traditional CdS buffer and undoped ZnO layers. It will be shown that Zn (O, S) films can be sputtered in argon atmosphere from a single mixed target without substrate heating. The photovoltaic performance of the simplified stack matches that of the conventional approach. Replacing the ZnO target with a ZnO/ZnS target may therefore be sufficient to omit the CdS buffer layer and avoid the associated complexity, safety and recycling issues, and to lower production cost.

引用

页数：4

共 7 条

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