COMMENT ON IDENTIFICATION OF A DEFECT IN A SEMICONDUCTOR - EL2 IN GAAS - REPLY

被引：1

作者：

VONBARDELEBEN, HJ ^{[1
]}

BOURGOIN, JC ^{[1
]}

STIEVENARD, D ^{[1
]}

机构：

[1] INST SUPER ELECTR NORD 41,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.36.7671

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7671 / 7672

页数：2

共 15 条

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