ELECTROMIGRATION OF IMPURITIES IN SILICON AND GALLIUM ARSENIDE

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作者：

DHAKA, VA

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1963年 / 110卷 / 12期

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O646 [电化学、电解、磁化学];

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081704 ;

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页码：C265 / C265

页数：1

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