EFFECT OF ULTRAVIOLET ILLUMINATION ON THE CHARGE TRAPPING BEHAVIOR IN SINX/INP METAL-INSULATOR-SEMICONDUCTOR STRUCTURE PROVIDED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

被引：0
作者：
KIM, CH
HAN, IK
LEE, JI
KANG, KN
KWON, SD
CHOE, B
PARK, HL
HER, J
LIM, H
机构：
[1] KOREA INST SCI & TECHNOL,OPT ELECTR LAB,POB 131,SEOUL 13065,SOUTH KOREA
[2] SEOUL NATL UNIV,DEPT PHYS,SEOUL 151742,SOUTH KOREA
[3] YONSEI UNIV,DEPT PHYS,SEOUL 120749,SOUTH KOREA
[4] AJOU UNIV,DEPT ELECTR ENGN,SUWON 440749,SOUTH KOREA
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 1994年 / 13卷 / 08期
关键词：
D O I：
10.1007/BF00592609
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：563 / 565
页数：3
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