MODULATION SPECTROSCOPIES ON A GAAS INAS GAAS SINGLE-MONOLAYER STRUCTURE

被引：9
作者：
CASTRILLO, P
ARMELLES, G
RUIZ, A
BRIONES, F
机构：
[1] Centro Nacional de Microelectronica, CSIC. Serrano, Madrid
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 10B期
关键词：
GAAS INAS GAAS SINGLE-MONOLAYER STRUCTURE; TRANSITION CHARACTERISTIC; MODULATION MECHANISM; PIEZOREFLECTANCE; PHOTOREFLECTANCE; REFLECTIVITY; ATOMIC LAYER MOLECULAR BEAM EPITAXY;
D O I：
10.1143/JJAP.30.L1784
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Piezoreflectance, photoreflectance and reflectivity measurements have been performed on a sample consisting of one InAs monomolecular plane in bulklike GaAs grown by atomic layer molecular beam epitaxy. The heavy-hole and light-hole characteristics of the two excitonic InAs-related transitions observed are experimentally elucidated for the first time. The electric field modulation observed in the photoreflectance spectra of such a heterostrvcture cannot be attributed to the quantum-confined Stark effect.
引用
收藏
页码：L1784 / L1786
页数：3
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