18.5-DB GAIN AT 18-GHZ WITH A GAAS PERMEABLE BASE TRANSISTOR

被引：12

作者：

BOZLER, CO

HOLLIS, MA

NICHOLS, KB

RABE, S

VERA, A

CHEN, CL

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 09期

关键词：

D O I：

10.1109/EDL.1985.26191

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：456 / 458

页数：3

共 11 条

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[3]

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[5]

BOZLER CO, UNPUB HOT SULFURIC A

[6] GAAS-MESFETS MADE BY ION-IMPLANTATION INTO MOCVD BUFFER LAYERS [J].

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[7]

HOLLIS MA, 1984 EL MAT C SANT B

[8]

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[9] MICROWAVE PERFORMANCE OF 0.25-MU-M GATE LENGTH HIGH ELECTRON-MOBILITY TRANSISTORS [J].

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IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) :142-145

[10] GAAS PERMEABLE BASE TRANSISTORS FABRICATED USING ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].

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GALE, RP ;

HOLLIS, MA ;

LINCOLN, GA ;

BOZLER, CO .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) :1969-1970

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