18.5-DB GAIN AT 18-GHZ WITH A GAAS PERMEABLE BASE TRANSISTOR

被引：12
作者：
BOZLER, CO
HOLLIS, MA
NICHOLS, KB
RABE, S
VERA, A
CHEN, CL
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 09期
关键词：
D O I：
10.1109/EDL.1985.26191
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：456 / 458
页数：3
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